Programmable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits

摘要

Programmable nano-switch arrays on GaAs-based nanowire networks are investigated for a reconfigurable binary-decision-diagram (BDD) logic circuit. A programmable switch was simply realized by inserting a SiNx thin layer between a metal gate and a nanowire. Fabricated switches were characterized in terms of hysteresis curve, program time dependences of off-state retention time, and on-state current. HCl treatment on SiNx prior to metal gate formation was found to remarkably improve the switching characteristics. We experimentally demonstrated correct and stable operation of a four-input reconfigurable BDD circuit integrating the switch array with HCl treatment.